Analysis of CMOS and BiCMOS Four-Diodes Direct Coupled Tuneable Resistance
نویسندگان
چکیده
This paper gives important features of CMOS and BiCMOS four-diodes direct coupled tuneable resistance. Circuit performances of three resistance topologies are explored and compared with the traditional CMOS tuneable transresistance designed from a one-stage operational transconductance amplifier (OTA). Simulations results have been realised using nominal parameters of the AMS 0.8μm CMOS and BiCMOS technology. At a total power consumption lower than 380μW, the –3dB bandwidth of the impedance transfer is higher than 280MHz and 1.1GHz respectively for the CMOS and BiCMOS implementations.
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